Indium Bumping

indium bumping

Layout Guidelines

Indium Bumps

1

 Bump Height Average  35 µm std. (Capability: 5-50 µm) (Bump Size Dependence)

2

 Bump Height Uniformity  ±10% (in die); ±30% (in wafer); ±30% (wfr to wfr)

3

 Bump Pitch  20 µm Minimum (Bump Size Dependence)

4

 Bump Spacing  10 µm Minimum

5

 Bump to Passivation Overlap  7 µm Per Side Minimum

6

 Edge of Bump to Aluminum  7 µm Per Side Minimum

7

 Passivation Opening  10 µm Minimum

8

 Passivation Angle of Slope  > 60 Degrees

9

 Passivation Type  Nitride, OxyNitride, Polyimide

10

Passivation Height 0.5 – 1.8 µm

11

 Wafer Edge Exclusion  3 mm

12

 Bump Mask Layout and Procurement  TLMI In-house Capability: Requires GDSII, Stepping Distance, Wafer Map

 

Bump Specifications

Indium Bumps

1

 Bump Material  99.9+% Indium

2

 Bumping Method  Electroplating

3

 UBM Material  WTi, WTI/Au/Nickel

4

 UBM Deposition Method  Sputtering, Sputtering/Plating

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