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Layout Guidelines |
Indium Bumps |
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1 |
Bump Height Average | 35 µm std. (Capability: 5-50 µm) (Bump Size Dependence) |
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2 |
Bump Height Uniformity | ±10% (in die); ±30% (in wafer); ±30% (wfr to wfr) |
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3 |
Bump Pitch | 20 µm Minimum (Bump Size Dependence) |
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4 |
Bump Spacing | 10 µm Minimum |
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5 |
Bump to Passivation Overlap | 7 µm Per Side Minimum |
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6 |
Edge of Bump to Aluminum | 7 µm Per Side Minimum |
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7 |
Passivation Opening | 10 µm Minimum |
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8 |
Passivation Angle of Slope | > 60 Degrees |
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9 |
Passivation Type | Nitride, OxyNitride, Polyimide |
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10 |
Passivation Height | 0.5 – 1.8 µm |
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11 |
Wafer Edge Exclusion | 3 mm |
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12 |
Bump Mask Layout and Procurement | TLMI In-house Capability: Requires GDSII, Stepping Distance, Wafer Map |
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Bump Specifications |
Indium Bumps |
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1 |
Bump Material | 99.9+% Indium |
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2 |
Bumping Method | Electroplating |
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3 |
UBM Material | WTi, WTI/Au/Nickel |
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4 |
UBM Deposition Method | Sputtering, Sputtering/Plating |